Tuesday, April 30, 2013

TriQuint Claims Technology Breakthrough

Hillsboro, Oregon-based TriQuint Semiconductor said today that it has made a technology breakthrough, producing the industry's first gallium nitride (GaN) transistors using GaN-on-diamond wafers. The company said the technology will allow new, RF amplifiers which are three times smaller or three times the power of current gallium nitride chips. The company said the technology was demonstrated as part of a Defense Advanced Research Projects Agency (DARPA) project, in conjunction with the University of Bristol, Group4 Labs and Lockheed Martin. TriQuint did not say when it expects the technology to hit the commercial market.